Special Issue of IEEE Transactions on Electron Devices on Solid-State Image Sensors

Albert Theuwissen publishes a call for papers for a Special Issue of IEEE Transactions on Electron Devices on Solid-State Image Sensors. Previous special issues on solid-state image sensors were published in 1976, 1985, 1991, 1997, 2003 and 2009.

Areas of interest include, but are not limited to:

1. Pixel device physics (New devices and structures, Advanced materials, Improved models and scaling, Advanced pixel circuits, Performance enhancement for QE, Dark current, Noise, Charge Multiplication Devices, etc.)
2. Image sensor design and performance (New architectures, Small pixels and Large format arrays, High dynamic range, 3D range capture, Low voltage, Low power, High frame rate readout, Scientific-grade, Single-Photon Sensitivity)
3. Image-sensor-specific peripheral circuits (ADCs and readout electronics, Color and image processing, Smart sensors and computational sensors, System on a chip)
4. Non-visible “image” sensors (Enhanced spectral response e.g., UV, NIR, High energy photon and particle detectors e.g., electrons, X-rays, Ions, Hybrid detectors, THz imagers)
5. Fabrication, packaging and manufacturing (stacked image sensors, back-side illuminated devices)
6. Miscellaneous topics related to image sensor technology

Submission Deadline: February 28th, 2015
Targeted Publication Date: January 2016

Guest Editor-in-Chief:
Prof. dr. Albert Theuwissen, Harvest Imaging, Bree, Belgium, and Delft University of Technology, Delft, the Netherlands.

Special Issue of IEEE Transactions on Electron Devices on Solid-State Image Sensors
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